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| Speicher News | Mittwoch, den 14.03.2012 | |||
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Micron Technology is extending its legacy of memory leadership by introducing a new product category of low-power DDR3 solutions targeted at the tablet and thin- and light- client markets. These 2-gigabit Gb and 4Gb DDR3Lm solutions focus on low self-refresh power IDD6 for longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM. The first 2Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron's 4Gb DDR3Lm product delivers the same optimized power efficiency as the 2Gb part, with a reduced chip count that is ideally suited for ultra-thin and tablet customers. Both 2Gb and 4Gb DDR3Lm will be adopted into Micron's 30-nanometer nm class to further optimize the power and performance features, with the 4Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.
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